Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed. The NST consists of GaN/AlGaN/GaN and AlN/AlGaN/GaN heterojunctions laterally from the gate to drain side. By utilizing the different...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-10-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S221137972300815X |