Optimal Bias Condition of Dummy WL for Sub-Block GIDL Erase Operation in 3D NAND Flash Memory
In this study, we have analyzed the optimal bias condition of dummy WL for the sub-block gate induced drain leakage (GIDL) erase operation in 16-layer 3D NAND flash memory. Three-dimensional NAND flash memory performs an erase operation in units of pages. Increasing the number of stacks increases th...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-08-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/17/2738 |