Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching

Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching

Porosification of nitride semiconductors provides a new paradigm for advanced engineering of the properties of optoelectronic materials. Electrochemical etching creates porosity in doped layers while leaving undoped layers undamaged, allowing the realization of complex three-dimensional porous nanos...

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Bibliographic Details
Main Authors: Fabien C.-P. Massabuau, Peter H. Griffin, Helen P. Springbett, Yingjun Liu, R. Vasant Kumar, Tongtong Zhu, Rachel A. Oliver
Format: Article
Language:English
Published: AIP Publishing LLC 2020-03-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5142491

Internet

http://dx.doi.org/10.1063/1.5142491

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