Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO<sub>2</sub> Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition
Scandium (Sc) and yttrium (Y) co-doped ZrO<sub>2</sub> (ScYSZ) thin films were prepared on a SiO<sub>2</sub>-Si substrate via pulsed laser deposition (PLD) method. In order to obtain good quality thin films with the desired microstructure, various oxygen partial pressures (&l...
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author | Jennet R. Rabo Makoto Takayanagi Takashi Tsuchiya Hideki Nakajima Kazuya Terabe Rinlee Butch M. Cervera |
author_facet | Jennet R. Rabo Makoto Takayanagi Takashi Tsuchiya Hideki Nakajima Kazuya Terabe Rinlee Butch M. Cervera |
author_sort | Jennet R. Rabo |
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description | Scandium (Sc) and yttrium (Y) co-doped ZrO<sub>2</sub> (ScYSZ) thin films were prepared on a SiO<sub>2</sub>-Si substrate via pulsed laser deposition (PLD) method. In order to obtain good quality thin films with the desired microstructure, various oxygen partial pressures (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>P</mi><mrow><msub><mi>O</mi><mn>2</mn></msub></mrow></msub><mo stretchy="false">)</mo></mrow></semantics></math></inline-formula> from 0.01 Pa to 10 Pa and substrate temperatures (<i>T<sub>s</sub></i>) from 25 °C to 800 °C were investigated. X-ray diffraction (XRD) patterns results showed that amorphous ScYSZ thin films were formed at room substrate temperature while cubic polycrystalline thin films were obtained at higher substrate temperatures (<i>T<sub>s</sub></i> = 200 °C, 400 °C, 600 °C, 800 °C). Raman spectra revealed a distinct Raman shift at around 600 cm<sup>−1</sup> supporting a cubic phase. However, a transition from cubic to tetragonal phase can be observed with increasing oxygen partial pressure. Photoemission spectroscopy (PES) spectra suggested supporting analysis that more oxygen vacancies in the lattice can be observed for samples deposited at lower oxygen partial pressures resulting in a cubic structure with higher dopant cation binding energies as compared to the tetragonal structure observed at higher oxygen partial pressure. On the other hand, dense morphologies can be obtained at lower <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mo> </mo><msub><mi>P</mi><mrow><msub><mi>O</mi><mn>2</mn></msub></mrow></msub></mrow></semantics></math></inline-formula> (0.01 Pa and 0.1 Pa) while more porous morphologies can be obtained at higher <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>P</mi><mrow><msub><mi>O</mi><mn>2</mn></msub></mrow></msub></mrow></semantics></math></inline-formula> (1.0 Pa and 10 Pa). |
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spelling | doaj.art-dd9b4d5dcd484a97977536e0de3237882023-11-23T14:28:37ZengMDPI AGMaterials1996-19442022-01-0115241010.3390/ma15020410Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO<sub>2</sub> Solid Electrolyte Thin Films Prepared via Pulsed Laser DepositionJennet R. Rabo0Makoto Takayanagi1Takashi Tsuchiya2Hideki Nakajima3Kazuya Terabe4Rinlee Butch M. Cervera5Energy Storage and Conversion Materials Laboratory, Department of Mining, Metallurgical and Materials Engineering, University of the Philippines Diliman, Quezon City 1101, PhilippinesInternational Center for Materials Nanoarchitectonics (WIPI-MANA), National Institute for Materials Science, Tsukuba 305-0044, Ibaraki Prefecture, JapanInternational Center for Materials Nanoarchitectonics (WIPI-MANA), National Institute for Materials Science, Tsukuba 305-0044, Ibaraki Prefecture, JapanSynchrotron Light Research Institute, Nakhon Ratchasima 30000, ThailandInternational Center for Materials Nanoarchitectonics (WIPI-MANA), National Institute for Materials Science, Tsukuba 305-0044, Ibaraki Prefecture, JapanEnergy Storage and Conversion Materials Laboratory, Department of Mining, Metallurgical and Materials Engineering, University of the Philippines Diliman, Quezon City 1101, PhilippinesScandium (Sc) and yttrium (Y) co-doped ZrO<sub>2</sub> (ScYSZ) thin films were prepared on a SiO<sub>2</sub>-Si substrate via pulsed laser deposition (PLD) method. In order to obtain good quality thin films with the desired microstructure, various oxygen partial pressures (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>P</mi><mrow><msub><mi>O</mi><mn>2</mn></msub></mrow></msub><mo stretchy="false">)</mo></mrow></semantics></math></inline-formula> from 0.01 Pa to 10 Pa and substrate temperatures (<i>T<sub>s</sub></i>) from 25 °C to 800 °C were investigated. X-ray diffraction (XRD) patterns results showed that amorphous ScYSZ thin films were formed at room substrate temperature while cubic polycrystalline thin films were obtained at higher substrate temperatures (<i>T<sub>s</sub></i> = 200 °C, 400 °C, 600 °C, 800 °C). Raman spectra revealed a distinct Raman shift at around 600 cm<sup>−1</sup> supporting a cubic phase. However, a transition from cubic to tetragonal phase can be observed with increasing oxygen partial pressure. Photoemission spectroscopy (PES) spectra suggested supporting analysis that more oxygen vacancies in the lattice can be observed for samples deposited at lower oxygen partial pressures resulting in a cubic structure with higher dopant cation binding energies as compared to the tetragonal structure observed at higher oxygen partial pressure. On the other hand, dense morphologies can be obtained at lower <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mo> </mo><msub><mi>P</mi><mrow><msub><mi>O</mi><mn>2</mn></msub></mrow></msub></mrow></semantics></math></inline-formula> (0.01 Pa and 0.1 Pa) while more porous morphologies can be obtained at higher <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>P</mi><mrow><msub><mi>O</mi><mn>2</mn></msub></mrow></msub></mrow></semantics></math></inline-formula> (1.0 Pa and 10 Pa).https://www.mdpi.com/1996-1944/15/2/410co-doped zirconiazirconia-doped thin filmspulsed laser depositionsolid electrolyteXPS |
spellingShingle | Jennet R. Rabo Makoto Takayanagi Takashi Tsuchiya Hideki Nakajima Kazuya Terabe Rinlee Butch M. Cervera Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO<sub>2</sub> Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition Materials co-doped zirconia zirconia-doped thin films pulsed laser deposition solid electrolyte XPS |
title | Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO<sub>2</sub> Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition |
title_full | Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO<sub>2</sub> Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition |
title_fullStr | Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO<sub>2</sub> Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition |
title_full_unstemmed | Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO<sub>2</sub> Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition |
title_short | Effects of Oxygen Partial Pressure and Substrate Temperature on the Structure and Morphology of Sc and Y Co-Doped ZrO<sub>2</sub> Solid Electrolyte Thin Films Prepared via Pulsed Laser Deposition |
title_sort | effects of oxygen partial pressure and substrate temperature on the structure and morphology of sc and y co doped zro sub 2 sub solid electrolyte thin films prepared via pulsed laser deposition |
topic | co-doped zirconia zirconia-doped thin films pulsed laser deposition solid electrolyte XPS |
url | https://www.mdpi.com/1996-1944/15/2/410 |
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