Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfOx Thin Films

Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfOx Thin Films

Abstract HfO2 is one of the most common memristive materials and it is widely accepted that oxygen vacancies are prerequisite to reduce the forming voltage of the respective memristive devices. Here, a series of six oxygen engineered substoichiometric HfO2 − x thin films with varying oxygen deficien...

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Bibliographic Details
Main Authors: Niclas Schmidt, Nico Kaiser, Tobias Vogel, Eszter Piros, Silvia Karthäuser, Rainer Waser, Lambert Alff, Regina Dittmann
Format: Article
Language:English
Published: Wiley-VCH 2024-04-01
Series:Advanced Electronic Materials
Subjects:
c‐AFM
defect engineering
grain boundaries
hafnium oxide
MBE
resistive switching
Online Access:https://doi.org/10.1002/aelm.202300693

Internet

https://doi.org/10.1002/aelm.202300693

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