IBIL Measurement and Optical Simulation of the D<sub>I</sub> Center in 4H-SiC

IBIL Measurement and Optical Simulation of the D<sub>I</sub> Center in 4H-SiC

In this paper, D<sub>I</sub> defects are studied via experiments and calculations. The 2 MeV H<sup>+</sup> is used to carry on an ion-beam-induced luminescence (IBIL) experiment to measure the in-situ luminescence of untreated and annealed 4H-SiC at 100 K. The results show th...

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Bibliographic Details
Main Authors: Wenli Jiang, Wei Cheng, Menglin Qiu, Shuai Wu, Xiao Ouyang, Lin Chen, Pan Pang, Minju Ying, Bin Liao
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Materials
Subjects:
IBIL
in-situ measurement
luminescence
D<sub>I</sub> defect
ab initio
Online Access:https://www.mdpi.com/1996-1944/16/7/2935

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https://www.mdpi.com/1996-1944/16/7/2935

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