Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

Bright photoluminescence from ordered arrays of SiGe nanowires grown on Si(111)

We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/Si(111) substrates. The production method employs Au catalysts with self-limited sizes deposited in SiO2-free sites opened-up in the substrate by focused ion beam patterning fo...

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Bibliographic Details
Main Authors: D. J. Lockwood, N. L. Rowell, A. Benkouider, A. Ronda, L. Favre, I. Berbezier
Format: Article
Language:English
Published: Beilstein-Institut 2014-12-01
Series:Beilstein Journal of Nanotechnology
Subjects:
bandgap
germanium
nanowires
near field
silicon
photoluminescence
Online Access:https://doi.org/10.3762/bjnano.5.259

Internet

https://doi.org/10.3762/bjnano.5.259

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