Insertion of Ag Layer in TiN/SiN<sub>x</sub>/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation

Insertion of Ag Layer in TiN/SiN<sub>x</sub>/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation

In this study, the electrical characteristics of TiN/SiNx/TiN and TiN/Ag/SiNx/TiN RRAMs were thoroughly investigated through I-V measurements. Our novel Ag-inserted silicon nitride-based resistive switching memory (RRAM) achieved switching operation at lower voltages and lower current levels compare...

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Bibliographic Details
Main Authors: Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Memristors
Monte Carlo simulation
resistive RAM (RRAM)
silver
silicon nitride
synapse device
Online Access:https://ieeexplore.ieee.org/document/9301470/

Internet

https://ieeexplore.ieee.org/document/9301470/

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