Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide
For improving retention characteristics in the NOR flash array, aluminum oxide (Al<sub>2</sub>O<sub>3</sub>, alumina) is utilized and incorporated as a tunneling layer. The proposed tunneling layers consist of SiO<sub>2</sub>/Al<sub>2</sub>O<sub>...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-03-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/12/3/328 |