Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide

For improving retention characteristics in the NOR flash array, aluminum oxide (Al<sub>2</sub>O<sub>3</sub>, alumina) is utilized and incorporated as a tunneling layer. The proposed tunneling layers consist of SiO<sub>2</sub>/Al<sub>2</sub>O<sub>...

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Bibliographic Details
Main Authors: Young Suh Song, Byung-Gook Park
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/12/3/328