Dead‐time optimisation for a phase‐shifted dc–dc full bridge converter with GaN HEMT
An accurate dead‐time adjustment method for phase‐shifted full bridge (PSFB) converter is presented. This method allows the dead‐time of converters to be optimised to meet zero voltage switching condition. The optimum dead‐time range can be predicted with high accuracy for any type of power semicond...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2016-04-01
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| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/el.2015.3650 |