Temperature resistance coefficient of doped with rare earth elements nanostructured silicon films
The regularities of changes in the concentration of an electrically active dopant in a nanostructured silicon film by changing the electrical resistivity depending on the doping conditions were investigated. The dependences of the changes in the obtained structures doped with rare-earth elements, su...
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| Formatua: | Artikulua |
| Hizkuntza: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2021-11-01
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| Saila: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Sarrera elektronikoa: | https://doklady.bsuir.by/jour/article/view/3213 |