Resolving the Unusual Gate Leakage Currents of Thin-Film Transistors with Single-Walled Carbon-Nanotube-Based Active Layers
Solution-processed single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs) in the research stage often have large active areas. This results in unusual gate leakage currents with high magnitudes that vary with applied voltages. In this paper, we report an improved structure for solution-p...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-11-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/22/3719 |