The Behavioural Model of Graphene Field-effect Transistor
The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Polish Academy of Sciences
2020-12-01
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| Series: | International Journal of Electronics and Telecommunications |
| Subjects: | |
| Online Access: | https://journals.pan.pl/Content/117132/PDF/101_2649_Luszczek_skl.pdf |