The Behavioural Model of Graphene Field-effect Transistor
The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Polish Academy of Sciences
2020-12-01
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| Series: | International Journal of Electronics and Telecommunications |
| Subjects: | |
| Online Access: | https://journals.pan.pl/Content/117132/PDF/101_2649_Luszczek_skl.pdf |
| _version_ | 1818489179677392896 |
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| author | Maciej Łuszczek Marek Turzyński Dariusz Świsulski |
| author_facet | Maciej Łuszczek Marek Turzyński Dariusz Świsulski |
| author_sort | Maciej Łuszczek |
| collection | DOAJ |
| description | The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-state characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future. |
| first_indexed | 2024-12-10T17:00:56Z |
| format | Article |
| id | doaj.art-de69f02ffdc5489893dd3d35de1cdf92 |
| institution | Directory Open Access Journal |
| issn | 2081-8491 2300-1933 |
| language | English |
| last_indexed | 2024-12-10T17:00:56Z |
| publishDate | 2020-12-01 |
| publisher | Polish Academy of Sciences |
| record_format | Article |
| series | International Journal of Electronics and Telecommunications |
| spelling | doaj.art-de69f02ffdc5489893dd3d35de1cdf922022-12-22T01:40:34ZengPolish Academy of SciencesInternational Journal of Electronics and Telecommunications2081-84912300-19332020-12-01vol. 66No 4753758https://doi.org/10.24425/ijet.2020.134037The Behavioural Model of Graphene Field-effect TransistorMaciej ŁuszczekMarek TurzyńskiDariusz ŚwisulskiThe behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-state characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future.https://journals.pan.pl/Content/117132/PDF/101_2649_Luszczek_skl.pdfgraphene field-effect transistorbehavioural modelcircuit simulationssensors |
| spellingShingle | Maciej Łuszczek Marek Turzyński Dariusz Świsulski The Behavioural Model of Graphene Field-effect Transistor International Journal of Electronics and Telecommunications graphene field-effect transistor behavioural model circuit simulations sensors |
| title | The Behavioural Model of Graphene Field-effect Transistor |
| title_full | The Behavioural Model of Graphene Field-effect Transistor |
| title_fullStr | The Behavioural Model of Graphene Field-effect Transistor |
| title_full_unstemmed | The Behavioural Model of Graphene Field-effect Transistor |
| title_short | The Behavioural Model of Graphene Field-effect Transistor |
| title_sort | behavioural model of graphene field effect transistor |
| topic | graphene field-effect transistor behavioural model circuit simulations sensors |
| url | https://journals.pan.pl/Content/117132/PDF/101_2649_Luszczek_skl.pdf |
| work_keys_str_mv | AT maciejłuszczek thebehaviouralmodelofgraphenefieldeffecttransistor AT marekturzynski thebehaviouralmodelofgraphenefieldeffecttransistor AT dariuszswisulski thebehaviouralmodelofgraphenefieldeffecttransistor AT maciejłuszczek behaviouralmodelofgraphenefieldeffecttransistor AT marekturzynski behaviouralmodelofgraphenefieldeffecttransistor AT dariuszswisulski behaviouralmodelofgraphenefieldeffecttransistor |