The influence of low energy argon ion irradiation on generation of electrically active defects in silicon
The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etch...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2009-08-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2009/4_2009/pdf/08.zip |