The influence of low energy argon ion irradiation on generation of electrically active defects in silicon
The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etch...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2009-08-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2009/4_2009/pdf/08.zip |
| _version_ | 1818621980451012608 |
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| author | Popov V. M. Shustov Y. M. Klimenko A. S. Pokanevich A. P. |
| author_facet | Popov V. M. Shustov Y. M. Klimenko A. S. Pokanevich A. P. |
| author_sort | Popov V. M. |
| collection | DOAJ |
| description | The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etching of silicon by low-energy ions was shown to be an effective tool for task — oriented modification of electrophysical properties of semiconductor surface. |
| first_indexed | 2024-12-16T18:17:53Z |
| format | Article |
| id | doaj.art-de6a5a72b7314d1084a3c5700f0bdca1 |
| institution | Directory Open Access Journal |
| issn | 2225-5818 |
| language | English |
| last_indexed | 2024-12-16T18:17:53Z |
| publishDate | 2009-08-01 |
| publisher | Politehperiodika |
| record_format | Article |
| series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| spelling | doaj.art-de6a5a72b7314d1084a3c5700f0bdca12022-12-21T22:21:39ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182009-08-0144851The influence of low energy argon ion irradiation on generation of electrically active defects in siliconPopov V. M.Shustov Y. M.Klimenko A. S.Pokanevich A. P.The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etching of silicon by low-energy ions was shown to be an effective tool for task — oriented modification of electrophysical properties of semiconductor surface.http://www.tkea.com.ua/tkea/2009/4_2009/pdf/08.zipelectrically active defectssiliconion irradiationscanning electron microscopyphotosensitivitySchottky diodes |
| spellingShingle | Popov V. M. Shustov Y. M. Klimenko A. S. Pokanevich A. P. The influence of low energy argon ion irradiation on generation of electrically active defects in silicon Tekhnologiya i Konstruirovanie v Elektronnoi Apparature electrically active defects silicon ion irradiation scanning electron microscopy photosensitivity Schottky diodes |
| title | The influence of low energy argon ion irradiation on generation of electrically active defects in silicon |
| title_full | The influence of low energy argon ion irradiation on generation of electrically active defects in silicon |
| title_fullStr | The influence of low energy argon ion irradiation on generation of electrically active defects in silicon |
| title_full_unstemmed | The influence of low energy argon ion irradiation on generation of electrically active defects in silicon |
| title_short | The influence of low energy argon ion irradiation on generation of electrically active defects in silicon |
| title_sort | influence of low energy argon ion irradiation on generation of electrically active defects in silicon |
| topic | electrically active defects silicon ion irradiation scanning electron microscopy photosensitivity Schottky diodes |
| url | http://www.tkea.com.ua/tkea/2009/4_2009/pdf/08.zip |
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