TCAD Modeling of GaN HEMT Output Admittance Dispersion through Trap Rate Equation Green’s Functions
We present a novel and numerically efficient approach to analyse the sensitivity of AC parameters to variations of traps in GaN HEMTs. The approach exploits an in-house TCAD simulator implementing the drift-diffusion model self-consistently coupled with trap rate equations, solved in dynamic conditi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-05-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/11/2457 |