TCAD Modeling of GaN HEMT Output Admittance Dispersion through Trap Rate Equation Green’s Functions

We present a novel and numerically efficient approach to analyse the sensitivity of AC parameters to variations of traps in GaN HEMTs. The approach exploits an in-house TCAD simulator implementing the drift-diffusion model self-consistently coupled with trap rate equations, solved in dynamic conditi...

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Bibliographic Details
Main Authors: Eva Catoggio, Simona Donati Guerrieri, Fabrizio Bonani
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/12/11/2457