Internal Stress Prediction and Measurement of Mid-Infrared Multilayer Thin Films
We present an experimental method for evaluating interfacial force per width and predicting internal stress in mid-infrared band-pass filters (MIR-BPF). The interfacial force per width between the two kinds of thin-film materials was obtained by experimental measurement values, and the residual stre...
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| Format: | Article |
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MDPI AG
2021-02-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/14/5/1101 |
| _version_ | 1797395128073060352 |
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| author | Chuen-Lin Tien Kuan-Po Chen Hong-Yi Lin |
| author_facet | Chuen-Lin Tien Kuan-Po Chen Hong-Yi Lin |
| author_sort | Chuen-Lin Tien |
| collection | DOAJ |
| description | We present an experimental method for evaluating interfacial force per width and predicting internal stress in mid-infrared band-pass filters (MIR-BPF). The interfacial force per width between the two kinds of thin-film materials was obtained by experimental measurement values, and the residual stress of the multilayer thin films was predicted by the modified Ennos formula. A dual electron beam evaporation system combined with ion-assisted deposition was used to fabricate mid-infrared band-pass filters. The interfacial forces per width for Ge/SiO<sub>2</sub> and SiO<sub>2</sub>/Ge were 124.9 N/m and 127.6 N/m, respectively. The difference between the measured stress and predicted stress in the 23-layer MIR-BPF was below 0.059 GPa. The residual stresses of the four-layer film, as well as the 20-layer and 23-layer mid-infrared band-pass filter, were predicted by adding the interface stress to the modified Ennos formula. In the four-layer film, the difference between the predicted value and the measured stress of the HL (high–low refractive index) and LH (low–high refractive index) stacks were −0.384 GPa for (HL)<sup>2</sup> and −0.436 GPa for (LH)<sup>2</sup>, respectively. The predicted stress and the measured stress of the 20-layer mid-infrared filter were −0.316 GPa and −0.250 GPa. The predicted stress and the measured stress of the 23-layer mid-infrared filter were −0.257 GPa and −0.198 GPa, respectively. |
| first_indexed | 2024-03-09T00:29:58Z |
| format | Article |
| id | doaj.art-de8f177ceb94411b999deb3dd269e9a1 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T00:29:58Z |
| publishDate | 2021-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-de8f177ceb94411b999deb3dd269e9a12023-12-11T18:39:09ZengMDPI AGMaterials1996-19442021-02-01145110110.3390/ma14051101Internal Stress Prediction and Measurement of Mid-Infrared Multilayer Thin FilmsChuen-Lin Tien0Kuan-Po Chen1Hong-Yi Lin2Department of Electrical Engineering, Feng Chia University, Taichung 40724, TaiwanDepartment of Electrical Engineering, Feng Chia University, Taichung 40724, TaiwanElectrical and Communications Engineering, Feng Chia University, Taichung 40724, TaiwanWe present an experimental method for evaluating interfacial force per width and predicting internal stress in mid-infrared band-pass filters (MIR-BPF). The interfacial force per width between the two kinds of thin-film materials was obtained by experimental measurement values, and the residual stress of the multilayer thin films was predicted by the modified Ennos formula. A dual electron beam evaporation system combined with ion-assisted deposition was used to fabricate mid-infrared band-pass filters. The interfacial forces per width for Ge/SiO<sub>2</sub> and SiO<sub>2</sub>/Ge were 124.9 N/m and 127.6 N/m, respectively. The difference between the measured stress and predicted stress in the 23-layer MIR-BPF was below 0.059 GPa. The residual stresses of the four-layer film, as well as the 20-layer and 23-layer mid-infrared band-pass filter, were predicted by adding the interface stress to the modified Ennos formula. In the four-layer film, the difference between the predicted value and the measured stress of the HL (high–low refractive index) and LH (low–high refractive index) stacks were −0.384 GPa for (HL)<sup>2</sup> and −0.436 GPa for (LH)<sup>2</sup>, respectively. The predicted stress and the measured stress of the 20-layer mid-infrared filter were −0.316 GPa and −0.250 GPa. The predicted stress and the measured stress of the 23-layer mid-infrared filter were −0.257 GPa and −0.198 GPa, respectively.https://www.mdpi.com/1996-1944/14/5/1101internal stressinterfacial forcemultilayer thin filmband-pass filter |
| spellingShingle | Chuen-Lin Tien Kuan-Po Chen Hong-Yi Lin Internal Stress Prediction and Measurement of Mid-Infrared Multilayer Thin Films Materials internal stress interfacial force multilayer thin film band-pass filter |
| title | Internal Stress Prediction and Measurement of Mid-Infrared Multilayer Thin Films |
| title_full | Internal Stress Prediction and Measurement of Mid-Infrared Multilayer Thin Films |
| title_fullStr | Internal Stress Prediction and Measurement of Mid-Infrared Multilayer Thin Films |
| title_full_unstemmed | Internal Stress Prediction and Measurement of Mid-Infrared Multilayer Thin Films |
| title_short | Internal Stress Prediction and Measurement of Mid-Infrared Multilayer Thin Films |
| title_sort | internal stress prediction and measurement of mid infrared multilayer thin films |
| topic | internal stress interfacial force multilayer thin film band-pass filter |
| url | https://www.mdpi.com/1996-1944/14/5/1101 |
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