Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test
Silicon carbide (SiC)-based metal–oxide–semiconductor field-effect transistors (MOSFETs) hold promising application prospects in future high-capacity high-power converters due to their excellent electrothermal characteristics. However, as nascent power electronic devices, their long-term operational...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-05-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/17/11/2557 |