Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT

Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT

This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN layer was grown via two-step growth. In the f...

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Bibliographic Details
Main Authors: Yusnizam Yusuf, Muhammad Esmed Alif Samsudin, Muhamad Ikram Md Taib, Mohd Anas Ahmad, Mohamed Fauzi Packeer Mohamed, Hiroshi Kawarada, Shaili Falina, Norzaini Zainal, Mohd Syamsul
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Crystals
Subjects:
AlGaN/GaN
III–V nitride
HEMT
high voltage
Online Access:https://www.mdpi.com/2073-4352/13/1/90

Internet

https://www.mdpi.com/2073-4352/13/1/90

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