Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT
This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN layer was grown via two-step growth. In the f...
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MDPI AG
2023-01-01
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| Online Access: | https://www.mdpi.com/2073-4352/13/1/90 |
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| author | Yusnizam Yusuf Muhammad Esmed Alif Samsudin Muhamad Ikram Md Taib Mohd Anas Ahmad Mohamed Fauzi Packeer Mohamed Hiroshi Kawarada Shaili Falina Norzaini Zainal Mohd Syamsul |
| author_facet | Yusnizam Yusuf Muhammad Esmed Alif Samsudin Muhamad Ikram Md Taib Mohd Anas Ahmad Mohamed Fauzi Packeer Mohamed Hiroshi Kawarada Shaili Falina Norzaini Zainal Mohd Syamsul |
| author_sort | Yusnizam Yusuf |
| collection | DOAJ |
| description | This paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN layer was grown via two-step growth. In the first step, the V/III ratio was applied at 1902 and then at 3046 in the second step. The FWHMs of the XRD (002) and (102) peaks of the GaN layer were around 205 arcsec ((002) peak) and 277 arcsec ((102) peak). Moreover, the surface of the GaN layer showed clear evidence of step flows, which resulted in the smooth surface of the layer as well as the overgrown of the AlGaN layer. Subsequently, the AlGaN/GaN heterostructure was fabricated into a lateral HEMT with wide gate-to-drain length (L<sub>GD</sub>). The device exhibited a clear working HEMT characteristic with high breakdown voltages up to 497 V. In comparison to many reported AlGaN/GaN HEMTs, no AlGaN interlayer was inserted in our AlGaN/GaN heterostructure. By improving the growth conditions for the two-step growth, the performance of AlGaN/GaN HEMTs could be improved further. |
| first_indexed | 2024-03-09T13:07:08Z |
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| last_indexed | 2024-03-09T13:07:08Z |
| publishDate | 2023-01-01 |
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| series | Crystals |
| spelling | doaj.art-ded32dfc16404d6692249f61464b62cf2023-11-30T21:47:51ZengMDPI AGCrystals2073-43522023-01-011319010.3390/cryst13010090Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMTYusnizam Yusuf0Muhammad Esmed Alif Samsudin1Muhamad Ikram Md Taib2Mohd Anas Ahmad3Mohamed Fauzi Packeer Mohamed4Hiroshi Kawarada5Shaili Falina6Norzaini Zainal7Mohd Syamsul8Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, MalaysiaInstitute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, MalaysiaInstitute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, MalaysiaInstitute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, MalaysiaSchool of Electrical and Electronic Engineering, Universiti Sains Malaysia, Nibong Tebal 14300, Pulau Pinang, MalaysiaFaculty of Science and Engineering, Waseda University, Tokyo 169-8555, JapanFaculty of Science and Engineering, Waseda University, Tokyo 169-8555, JapanInstitute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, MalaysiaInstitute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, MalaysiaThis paper presents reduced dislocation of the AlGaN/GaN heterostructure for high-voltage lateral high-electron-mobility transistor (HEMT) devices. AlGaN/GaN heterostructure was grown on sapphire substrate. Prior to the growth of the AlGaN layer, the GaN layer was grown via two-step growth. In the first step, the V/III ratio was applied at 1902 and then at 3046 in the second step. The FWHMs of the XRD (002) and (102) peaks of the GaN layer were around 205 arcsec ((002) peak) and 277 arcsec ((102) peak). Moreover, the surface of the GaN layer showed clear evidence of step flows, which resulted in the smooth surface of the layer as well as the overgrown of the AlGaN layer. Subsequently, the AlGaN/GaN heterostructure was fabricated into a lateral HEMT with wide gate-to-drain length (L<sub>GD</sub>). The device exhibited a clear working HEMT characteristic with high breakdown voltages up to 497 V. In comparison to many reported AlGaN/GaN HEMTs, no AlGaN interlayer was inserted in our AlGaN/GaN heterostructure. By improving the growth conditions for the two-step growth, the performance of AlGaN/GaN HEMTs could be improved further.https://www.mdpi.com/2073-4352/13/1/90AlGaN/GaNIII–V nitrideHEMThigh voltage |
| spellingShingle | Yusnizam Yusuf Muhammad Esmed Alif Samsudin Muhamad Ikram Md Taib Mohd Anas Ahmad Mohamed Fauzi Packeer Mohamed Hiroshi Kawarada Shaili Falina Norzaini Zainal Mohd Syamsul Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT Crystals AlGaN/GaN III–V nitride HEMT high voltage |
| title | Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT |
| title_full | Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT |
| title_fullStr | Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT |
| title_full_unstemmed | Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT |
| title_short | Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT |
| title_sort | two step gan layer growth for high voltage lateral algan gan hemt |
| topic | AlGaN/GaN III–V nitride HEMT high voltage |
| url | https://www.mdpi.com/2073-4352/13/1/90 |
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