Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures

Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures

Development of semiconductor devices based on AlGaN/GaN heterostructure requires study and improvement of ohmic contacts, whose necessary improvement lies in process of checking new metallic compositions and thermal formation process parameters. Usually, in metallic ohmic annealed contacts of AlGaN/...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron: Grzegorz Ilgiewicz, Wojciech Macherzynski, Joanna Prazmowska-Czajka, Andrzej Stafiniak, Regina Paszkiewicz
Fformat: Erthygl
Iaith:English
Cyhoeddwyd: VSB-Technical University of Ostrava 2021-01-01
Cyfres:Advances in Electrical and Electronic Engineering
Pynciau:
algan/gan
ohmic contact
scandium.
Mynediad Ar-lein:http://advances.utc.sk/index.php/AEEE/article/view/4134

Rhyngrwyd

http://advances.utc.sk/index.php/AEEE/article/view/4134

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