Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures
Development of semiconductor devices based on AlGaN/GaN heterostructure requires study and improvement of ohmic contacts, whose necessary improvement lies in process of checking new metallic compositions and thermal formation process parameters. Usually, in metallic ohmic annealed contacts of AlGaN/...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
VSB-Technical University of Ostrava
2021-01-01
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| Series: | Advances in Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/4134 |