Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures
Development of semiconductor devices based on AlGaN/GaN heterostructure requires study and improvement of ohmic contacts, whose necessary improvement lies in process of checking new metallic compositions and thermal formation process parameters. Usually, in metallic ohmic annealed contacts of AlGaN/...
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| Format: | Article |
| Language: | English |
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VSB-Technical University of Ostrava
2021-01-01
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| Series: | Advances in Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://advances.utc.sk/index.php/AEEE/article/view/4134 |
| _version_ | 1797827004966371328 |
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| author | Grzegorz Ilgiewicz Wojciech Macherzynski Joanna Prazmowska-Czajka Andrzej Stafiniak Regina Paszkiewicz |
| author_facet | Grzegorz Ilgiewicz Wojciech Macherzynski Joanna Prazmowska-Czajka Andrzej Stafiniak Regina Paszkiewicz |
| author_sort | Grzegorz Ilgiewicz |
| collection | DOAJ |
| description | Development of semiconductor devices based on AlGaN/GaN heterostructure requires study and improvement of ohmic contacts, whose necessary improvement lies in process of checking new metallic compositions and thermal formation process parameters. Usually, in metallic ohmic annealed contacts of AlGaN/GaN heterostructures, titanium is applied as the first layer, but scandium may be an alternative. It was proved to be useful to obtain both ohmic and Schottky characteristics, depending on annealing temperature of the contact. In the presented research, contacts including scandium (Sc/Al/Mo/Au) were fabricated, and, as reference sample, contacts with titanium including metallziation (Ti/Al/Mo/Au). Reference sample was annealed at 825°C, and forming temperatures for scandium contacts were 825°C, 625°C, and 425°C. All samples after thermal formation process were additionally thickened with Ru/Au bilayer. To quickly compare level of metals in metallization mixing during formation process and to check applicability of EDS (Energy-Dispersive X-ray Spectroscopy), the simulations of electrons trajectories and EDS point scans were performed. |
| first_indexed | 2024-04-09T12:41:19Z |
| format | Article |
| id | doaj.art-df16158e999a4fe4bcf604a65f2fe8e3 |
| institution | Directory Open Access Journal |
| issn | 1336-1376 1804-3119 |
| language | English |
| last_indexed | 2024-04-09T12:41:19Z |
| publishDate | 2021-01-01 |
| publisher | VSB-Technical University of Ostrava |
| record_format | Article |
| series | Advances in Electrical and Electronic Engineering |
| spelling | doaj.art-df16158e999a4fe4bcf604a65f2fe8e32023-05-14T20:50:13ZengVSB-Technical University of OstravaAdvances in Electrical and Electronic Engineering1336-13761804-31192021-01-0119435536010.15598/aeee.v19i4.41341137Study of Scandium Based Ohmic Contacts to AlGaN/GaN HeterostructuresGrzegorz Ilgiewicz0Wojciech Macherzynski1Joanna Prazmowska-Czajka2Andrzej Stafiniak3Regina Paszkiewicz4Department of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, PolandDepartment of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, PolandDepartment of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, PolandDepartment of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, PolandDepartment of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, PolandDevelopment of semiconductor devices based on AlGaN/GaN heterostructure requires study and improvement of ohmic contacts, whose necessary improvement lies in process of checking new metallic compositions and thermal formation process parameters. Usually, in metallic ohmic annealed contacts of AlGaN/GaN heterostructures, titanium is applied as the first layer, but scandium may be an alternative. It was proved to be useful to obtain both ohmic and Schottky characteristics, depending on annealing temperature of the contact. In the presented research, contacts including scandium (Sc/Al/Mo/Au) were fabricated, and, as reference sample, contacts with titanium including metallziation (Ti/Al/Mo/Au). Reference sample was annealed at 825°C, and forming temperatures for scandium contacts were 825°C, 625°C, and 425°C. All samples after thermal formation process were additionally thickened with Ru/Au bilayer. To quickly compare level of metals in metallization mixing during formation process and to check applicability of EDS (Energy-Dispersive X-ray Spectroscopy), the simulations of electrons trajectories and EDS point scans were performed.http://advances.utc.sk/index.php/AEEE/article/view/4134algan/ganohmic contactscandium. |
| spellingShingle | Grzegorz Ilgiewicz Wojciech Macherzynski Joanna Prazmowska-Czajka Andrzej Stafiniak Regina Paszkiewicz Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures Advances in Electrical and Electronic Engineering algan/gan ohmic contact scandium. |
| title | Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures |
| title_full | Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures |
| title_fullStr | Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures |
| title_full_unstemmed | Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures |
| title_short | Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures |
| title_sort | study of scandium based ohmic contacts to algan gan heterostructures |
| topic | algan/gan ohmic contact scandium. |
| url | http://advances.utc.sk/index.php/AEEE/article/view/4134 |
| work_keys_str_mv | AT grzegorzilgiewicz studyofscandiumbasedohmiccontactstoalganganheterostructures AT wojciechmacherzynski studyofscandiumbasedohmiccontactstoalganganheterostructures AT joannaprazmowskaczajka studyofscandiumbasedohmiccontactstoalganganheterostructures AT andrzejstafiniak studyofscandiumbasedohmiccontactstoalganganheterostructures AT reginapaszkiewicz studyofscandiumbasedohmiccontactstoalganganheterostructures |