Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures

Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures

Development of semiconductor devices based on AlGaN/GaN heterostructure requires study and improvement of ohmic contacts, whose necessary improvement lies in process of checking new metallic compositions and thermal formation process parameters. Usually, in metallic ohmic annealed contacts of AlGaN/...

Full description

Bibliographic Details
Main Authors: Grzegorz Ilgiewicz, Wojciech Macherzynski, Joanna Prazmowska-Czajka, Andrzej Stafiniak, Regina Paszkiewicz
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2021-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
algan/gan
ohmic contact
scandium.
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/4134

Similar Items

Similar Items