Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers
Modern multi-color RGB micro-light emitting diode (μLED) displays and digital micro-mirror laser projectors often require the use of both III-V and III-Nitride material systems for different pixel/laser colors. This is due primarily to the conventionally low efficiencies of red emitters b...
| Päätekijät: | , , |
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| Aineistotyyppi: | Artikkeli |
| Kieli: | English |
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IEEE
2021-01-01
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| Sarja: | IEEE Photonics Journal |
| Aiheet: | |
| Linkit: | https://ieeexplore.ieee.org/document/9330534/ |