Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers

Analysis of InGaN-Delta-InN Quantum Wells on InGaN Substrates for Red Light Emitting Diodes and Lasers

Modern multi-color RGB micro-light emitting diode (μLED) displays and digital micro-mirror laser projectors often require the use of both III-V and III-Nitride material systems for different pixel/laser colors. This is due primarily to the conventionally low efficiencies of red emitters b...

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Bibliographic Details
Main Authors: Bryan Melanson, Cheng Liu, Jing Zhang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Photonics Journal
Subjects:
LED
GaN
InGaN
delta-InN
red-emission
wavefunction
Online Access:https://ieeexplore.ieee.org/document/9330534/

Internet

https://ieeexplore.ieee.org/document/9330534/

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