On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra

On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra

The known and obtained in this work dependences of the 4.2, 77 and 295 K peak positions hm of the Cd1–xZnxTe edge emission bands induced by: (a) annihilation of free X and bound on shallow neutral acceptors A0 or shallow neutral donors D0 excitons A0X and D0X and (b) recombination of free and shall...

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Bibliographic Details
Main Authors: K.D. Glinchuk, V.P. Maslov, O.M. Strilchuk, A.B. Lyapina
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2017-10-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
Cd1–xZnxTe composition
photoluminescence
free and bound excitons
accuracy of composition determination
Online Access:http://journal-spqeo.org.ua/n3_2017/P305-313abstr.html

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http://journal-spqeo.org.ua/n3_2017/P305-313abstr.html

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