Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlO<sub>x</sub> Thin Layer
ITO/WO<sub>x</sub>/TaN and ITO/WO<sub>x</sub>/AlO<sub>x</sub>/TaN memory cells were fabricated as a neuromorphic device that is compatible with CMOS. They are suitable for the information age, which requires a large amount of data as next-generation memory. The de...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-12-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/15/24/9081 |