Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing
In this paper, we propose for the first time a self-refreshing mechanism in a junctionless field-effect transistor (JLFET) based on one-transistor dynamic random-access memory (1T-DRAM) with a silicon-on-insulator (SOI) structure. The self-refreshing mechanism continuously creates holes by appropria...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-01-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/14/2/179 |