Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing
In this paper, we propose for the first time a self-refreshing mechanism in a junctionless field-effect transistor (JLFET) based on one-transistor dynamic random-access memory (1T-DRAM) with a silicon-on-insulator (SOI) structure. The self-refreshing mechanism continuously creates holes by appropria...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/14/2/179 |
| _version_ | 1797342896396959744 |
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| author | Sang Ho Lee Jin Park Young Jun Yoon In Man Kang |
| author_facet | Sang Ho Lee Jin Park Young Jun Yoon In Man Kang |
| author_sort | Sang Ho Lee |
| collection | DOAJ |
| description | In this paper, we propose for the first time a self-refreshing mechanism in a junctionless field-effect transistor (JLFET) based on one-transistor dynamic random-access memory (1T-DRAM) with a silicon-on-insulator (SOI) structure. The self-refreshing mechanism continuously creates holes by appropriately generating impact ionization during the holding process through the application of an appropriate operation bias voltage. This leads to self-refreshing, which prevents the recombination of holes. When using the self-refreshing mechanism for the proposed device, the sensing margins were 15.4 and 12.7 μA/μm at 300 and 358 K, respectively. Moreover, the device achieved an excellent performance retention time of >500 ms, regardless of the temperature of the 1T-DRAM with a single gate. Furthermore, cell disturbance analysis and voltage optimization were performed to evaluate the in-cell reliability of the proposed device. It also showed excellent performance in terms of energy consumption and writing speed. |
| first_indexed | 2024-03-08T10:39:49Z |
| format | Article |
| id | doaj.art-df6dee22da8e4a5688194e0000d61274 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-08T10:39:49Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-df6dee22da8e4a5688194e0000d612742024-01-26T17:58:28ZengMDPI AGNanomaterials2079-49912024-01-0114217910.3390/nano14020179Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-RefreshingSang Ho Lee0Jin Park1Young Jun Yoon2In Man Kang3School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of KoreaDepartment of Electronic Engineering, Andong National University, 1375 Gyengdong-ro, Andong 36729, Republic of KoreaSchool of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of KoreaIn this paper, we propose for the first time a self-refreshing mechanism in a junctionless field-effect transistor (JLFET) based on one-transistor dynamic random-access memory (1T-DRAM) with a silicon-on-insulator (SOI) structure. The self-refreshing mechanism continuously creates holes by appropriately generating impact ionization during the holding process through the application of an appropriate operation bias voltage. This leads to self-refreshing, which prevents the recombination of holes. When using the self-refreshing mechanism for the proposed device, the sensing margins were 15.4 and 12.7 μA/μm at 300 and 358 K, respectively. Moreover, the device achieved an excellent performance retention time of >500 ms, regardless of the temperature of the 1T-DRAM with a single gate. Furthermore, cell disturbance analysis and voltage optimization were performed to evaluate the in-cell reliability of the proposed device. It also showed excellent performance in terms of energy consumption and writing speed.https://www.mdpi.com/2079-4991/14/2/179junctionless field-effect transistorsilicon-on-insulatorone-transistor dynamic random-access memoryself-refreshing operation |
| spellingShingle | Sang Ho Lee Jin Park Young Jun Yoon In Man Kang Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing Nanomaterials junctionless field-effect transistor silicon-on-insulator one-transistor dynamic random-access memory self-refreshing operation |
| title | Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing |
| title_full | Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing |
| title_fullStr | Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing |
| title_full_unstemmed | Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing |
| title_short | Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing |
| title_sort | capacitorless one transistor dynamic random access memory with novel mechanism self refreshing |
| topic | junctionless field-effect transistor silicon-on-insulator one-transistor dynamic random-access memory self-refreshing operation |
| url | https://www.mdpi.com/2079-4991/14/2/179 |
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