Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments
We present the experimental and theoretical results of analysis of the optically- induced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. Effective mass values for electrons were determined as m el ∗ = 0 . 93 m 0 and m el ∗ = 0...
| Auteurs principaux: | , , , , , , |
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| Format: | Article |
| Langue: | English |
| Publié: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2018-10-01
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| Collection: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Sujets: | |
| Accès en ligne: | http://journal-spqeo.org.ua/n3_2018/P249-255abstr.html |