Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments
We present the experimental and theoretical results of analysis of the optically- induced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. Effective mass values for electrons were determined as m el ∗ = 0 . 93 m 0 and m el ∗ = 0...
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| Formáid: | Alt |
| Teanga: | English |
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National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2018-10-01
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| Sraith: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Ábhair: | |
| Rochtain ar líne: | http://journal-spqeo.org.ua/n3_2018/P249-255abstr.html |
| _version_ | 1828352172540035072 |
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| author | D.V. Savchenko E.N. Kalabukhova B.D. Shanina N.T. Bagraev L.E. Klyachkin A.M. Malyarenko V.S. Khromov |
| author_facet | D.V. Savchenko E.N. Kalabukhova B.D. Shanina N.T. Bagraev L.E. Klyachkin A.M. Malyarenko V.S. Khromov |
| author_sort | D.V. Savchenko |
| collection | DOAJ |
| description | We present the experimental and theoretical results of analysis of the optically- induced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. Effective mass values for electrons were determined as m el ∗ = 0 . 93 m 0 and m el ∗ = 0 . 214 m 0 . The obtained value of the transversal mass is higher than that reported for bulk Si. Parameters defining the energy surfaces near the valence band edge for heavy and light holes were found to be equal: A = –4.002, B = 1.0, C = 4.025, and corresponding to the experimental effective masses obtained in three orientations of the magnetic field: m lh= 0 . 172 , m lh= 0 . 157 , m lh = 0 . 163 , and m hh= 0 . 46 , m ∗ [ 111 ] = 0 . 56 , m ∗ [ 110 ] = 0 . 53 . The obtained energy band parameters and effective masses for holes have coincided with those found in bulk Si. The average values of the relaxation time of the charge carriers are found to be: τ e,1 = 2.28⋅10 –10 s; τ e,2 = 3.57⋅10 –10 s; τ lh = 6.9⋅10 –10 s; τ hh = 7.2⋅10 –10 s, which are by one order of value larger than those obtained in bulk Si. The prolongation of the transport time for photo-excited electrons and holes can be explained by the spatial separation of electrons and holes in the field of the p + -n junction as well as by reduction of the scattering process due to the presence of boron dipole centers. Keywords: cyclotron resonance, effective mass, relaxation time, silicon nanostructure. |
| first_indexed | 2024-04-14T01:51:07Z |
| format | Article |
| id | doaj.art-df7fc51c4f194e9eae4a7f3adffde891 |
| institution | Directory Open Access Journal |
| issn | 1560-8034 1605-6582 |
| language | English |
| last_indexed | 2024-04-14T01:51:07Z |
| publishDate | 2018-10-01 |
| publisher | National Academy of Sciences of Ukraine. Institute of Semi conductor physics. |
| record_format | Article |
| series | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| spelling | doaj.art-df7fc51c4f194e9eae4a7f3adffde8912022-12-22T02:19:22ZengNational Academy of Sciences of Ukraine. Institute of Semi conductor physics.Semiconductor Physics, Quantum Electronics & Optoelectronics1560-80341605-65822018-10-0121324925510.15407/spqeo21.03.249Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experimentsD.V. Savchenko0 E.N. Kalabukhova1B.D. Shanina2N.T. Bagraev3L.E. Klyachkin4 A.M. Malyarenko5V.S. Khromov6Institute of Physics of the CAS, Na Slovance 2, Prague, 18221, Czech Republic V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine E-mail: kalabukhova@yahoo.com V. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine E-mail: kalabukhova@yahoo.com Ioffe Physical-Technical Institute RAS, Politekhnicheskaya str. 26, St. Petersburg, 194021, Russia Ioffe Physical-Technical Institute RAS, Politekhnicheskaya str. 26, St. Petersburg, 194021, Russia Ioffe Physical-Technical Institute RAS, Politekhnicheskaya str. 26, St. Petersburg, 194021, Russia Ioffe Physical-Technical Institute RAS, Politekhnicheskaya str. 26, St. Petersburg, 194021, Russia We present the experimental and theoretical results of analysis of the optically- induced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. Effective mass values for electrons were determined as m el ∗ = 0 . 93 m 0 and m el ∗ = 0 . 214 m 0 . The obtained value of the transversal mass is higher than that reported for bulk Si. Parameters defining the energy surfaces near the valence band edge for heavy and light holes were found to be equal: A = –4.002, B = 1.0, C = 4.025, and corresponding to the experimental effective masses obtained in three orientations of the magnetic field: m lh= 0 . 172 , m lh= 0 . 157 , m lh = 0 . 163 , and m hh= 0 . 46 , m ∗ [ 111 ] = 0 . 56 , m ∗ [ 110 ] = 0 . 53 . The obtained energy band parameters and effective masses for holes have coincided with those found in bulk Si. The average values of the relaxation time of the charge carriers are found to be: τ e,1 = 2.28⋅10 –10 s; τ e,2 = 3.57⋅10 –10 s; τ lh = 6.9⋅10 –10 s; τ hh = 7.2⋅10 –10 s, which are by one order of value larger than those obtained in bulk Si. The prolongation of the transport time for photo-excited electrons and holes can be explained by the spatial separation of electrons and holes in the field of the p + -n junction as well as by reduction of the scattering process due to the presence of boron dipole centers. Keywords: cyclotron resonance, effective mass, relaxation time, silicon nanostructure.http://journal-spqeo.org.ua/n3_2018/P249-255abstr.htmlcyclotron resonanceeffective massrelaxation timesilicon nanostructure |
| spellingShingle | D.V. Savchenko E.N. Kalabukhova B.D. Shanina N.T. Bagraev L.E. Klyachkin A.M. Malyarenko V.S. Khromov Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments Semiconductor Physics, Quantum Electronics & Optoelectronics cyclotron resonance effective mass relaxation time silicon nanostructure |
| title | Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_full | Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_fullStr | Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_full_unstemmed | Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_short | Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| title_sort | electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments |
| topic | cyclotron resonance effective mass relaxation time silicon nanostructure |
| url | http://journal-spqeo.org.ua/n3_2018/P249-255abstr.html |
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