Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments

Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments

We present the experimental and theoretical results of analysis of the optically- induced cyclotron resonance measurements carried out using the charge carriers in silicon (Si) nanostructures at 9 GHz and 4 K. Effective mass values for electrons were determined as m el ∗ = 0 . 93 m 0 and m el ∗ = 0...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид:	D.V. Savchenko, E.N. Kalabukhova, B.D. Shanina, N.T. Bagraev, L.E. Klyachkin, A.M. Malyarenko, V.S. Khromov
Формат:	Өгүүллэг
Хэл сонгох:	English
Хэвлэсэн:	National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2018-10-01
Цуврал:	Semiconductor Physics, Quantum Electronics & Optoelectronics
Нөхцлүүд:	cyclotron resonance effective mass relaxation time silicon nanostructure
Онлайн хандалт:	http://journal-spqeo.org.ua/n3_2018/P249-255abstr.html

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