Lattice Strain Relaxation and Compositional Control in As-Rich GaAsP/(100)GaAs Heterostructures Grown by MOVPE

Lattice Strain Relaxation and Compositional Control in As-Rich GaAsP/(100)GaAs Heterostructures Grown by MOVPE

The fabrication of high-efficiency GaAsP-based solar cells on GaAs wafers requires addressing structural issues arising from the materials lattice mismatch. We report on tensile strain relaxation and composition control of MOVPE-grown As-rich GaAs<sub>1−x</sub>P<sub>x</sub>/(...

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Bibliographic Details
Main Authors: Paola Prete, Daniele Calabriso, Emiliano Burresi, Leander Tapfer, Nico Lovergine
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Materials
Subjects:
GaAsP
III-V heterostructures
strain relaxation
critical thickness
metastable heterostructures
metalorganic vapor phase epitaxy
Online Access:https://www.mdpi.com/1996-1944/16/12/4254

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https://www.mdpi.com/1996-1944/16/12/4254

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