| Summary: | In this paper, a novel method is presented for the accurate extraction of key parameters of carbon nanotube field-effect transistors (CNTFETs) using S-parameter measurements. An equivalent circuit model, which utilizes lumped components based on the physical characteristics of the device, is employed to model the AC behavior (S-parameters) of the CNTFETs. The proposed method extracts the bias-dependent contact resistance, channel resistance, and gate-channel capacitance from the model at each gate voltage, thereby facilitating the extraction of the effective mobility of the CNT channel. At the last part of this paper, this method is used to quantitatively investigate the impact of electrostatic doping on CNTFETs. This new methodology offers an effective approach for characterizing CNTFETs, which is an important indicator for device optimization. Additionally, the proposed method can be easily applied to other types of FETs.
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