Novel extraction method for contact resistance and effective mobility in carbon nanotube field-effect transistors using S-parameter measurements
In this paper, a novel method is presented for the accurate extraction of key parameters of carbon nanotube field-effect transistors (CNTFETs) using S-parameter measurements. An equivalent circuit model, which utilizes lumped components based on the physical characteristics of the device, is employe...
| Glavni autori: | , , , |
|---|---|
| Format: | Članak |
| Jezik: | English |
| Izdano: |
Elsevier
2023-10-01
|
| Serija: | Results in Physics |
| Teme: | |
| Online pristup: | http://www.sciencedirect.com/science/article/pii/S2211379723007921 |
| _version_ | 1827794132128497664 |
|---|---|
| author | Yuming Zhang Yang Yang Tao Yang Yong Zhang |
| author_facet | Yuming Zhang Yang Yang Tao Yang Yong Zhang |
| author_sort | Yuming Zhang |
| collection | DOAJ |
| description | In this paper, a novel method is presented for the accurate extraction of key parameters of carbon nanotube field-effect transistors (CNTFETs) using S-parameter measurements. An equivalent circuit model, which utilizes lumped components based on the physical characteristics of the device, is employed to model the AC behavior (S-parameters) of the CNTFETs. The proposed method extracts the bias-dependent contact resistance, channel resistance, and gate-channel capacitance from the model at each gate voltage, thereby facilitating the extraction of the effective mobility of the CNT channel. At the last part of this paper, this method is used to quantitatively investigate the impact of electrostatic doping on CNTFETs. This new methodology offers an effective approach for characterizing CNTFETs, which is an important indicator for device optimization. Additionally, the proposed method can be easily applied to other types of FETs. |
| first_indexed | 2024-03-11T18:29:26Z |
| format | Article |
| id | doaj.art-df96857244c8406b8e78b350d2d5ce52 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-03-11T18:29:26Z |
| publishDate | 2023-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-df96857244c8406b8e78b350d2d5ce522023-10-13T13:53:28ZengElsevierResults in Physics2211-37972023-10-0153106999Novel extraction method for contact resistance and effective mobility in carbon nanotube field-effect transistors using S-parameter measurementsYuming Zhang0Yang Yang1Tao Yang2Yong Zhang3University of Electronic Science and Technology of China, Chengdu 611731, ChinaNanjing Electronic Devices Institute, Nanjing 210016, ChinaUniversity of Electronic Science and Technology of China, Chengdu 611731, China; Corresponding author.University of Electronic Science and Technology of China, Chengdu 611731, ChinaIn this paper, a novel method is presented for the accurate extraction of key parameters of carbon nanotube field-effect transistors (CNTFETs) using S-parameter measurements. An equivalent circuit model, which utilizes lumped components based on the physical characteristics of the device, is employed to model the AC behavior (S-parameters) of the CNTFETs. The proposed method extracts the bias-dependent contact resistance, channel resistance, and gate-channel capacitance from the model at each gate voltage, thereby facilitating the extraction of the effective mobility of the CNT channel. At the last part of this paper, this method is used to quantitatively investigate the impact of electrostatic doping on CNTFETs. This new methodology offers an effective approach for characterizing CNTFETs, which is an important indicator for device optimization. Additionally, the proposed method can be easily applied to other types of FETs.http://www.sciencedirect.com/science/article/pii/S2211379723007921Carbon nanotubeCNTFETContact resistanceChannel capacitanceMobilityS-parameter |
| spellingShingle | Yuming Zhang Yang Yang Tao Yang Yong Zhang Novel extraction method for contact resistance and effective mobility in carbon nanotube field-effect transistors using S-parameter measurements Results in Physics Carbon nanotube CNTFET Contact resistance Channel capacitance Mobility S-parameter |
| title | Novel extraction method for contact resistance and effective mobility in carbon nanotube field-effect transistors using S-parameter measurements |
| title_full | Novel extraction method for contact resistance and effective mobility in carbon nanotube field-effect transistors using S-parameter measurements |
| title_fullStr | Novel extraction method for contact resistance and effective mobility in carbon nanotube field-effect transistors using S-parameter measurements |
| title_full_unstemmed | Novel extraction method for contact resistance and effective mobility in carbon nanotube field-effect transistors using S-parameter measurements |
| title_short | Novel extraction method for contact resistance and effective mobility in carbon nanotube field-effect transistors using S-parameter measurements |
| title_sort | novel extraction method for contact resistance and effective mobility in carbon nanotube field effect transistors using s parameter measurements |
| topic | Carbon nanotube CNTFET Contact resistance Channel capacitance Mobility S-parameter |
| url | http://www.sciencedirect.com/science/article/pii/S2211379723007921 |
| work_keys_str_mv | AT yumingzhang novelextractionmethodforcontactresistanceandeffectivemobilityincarbonnanotubefieldeffecttransistorsusingsparametermeasurements AT yangyang novelextractionmethodforcontactresistanceandeffectivemobilityincarbonnanotubefieldeffecttransistorsusingsparametermeasurements AT taoyang novelextractionmethodforcontactresistanceandeffectivemobilityincarbonnanotubefieldeffecttransistorsusingsparametermeasurements AT yongzhang novelextractionmethodforcontactresistanceandeffectivemobilityincarbonnanotubefieldeffecttransistorsusingsparametermeasurements |