Tilt boundary formation in GeSi/Si (001) vicinal heterosystem
The structural state of GexSi1-x films grown on Si substrates with the vicinal orientation (1 1 13) has been studied. The (1 1 13) orientation has been obtained by rotating the singular plane (001) around the [1 1 ¯0] axis. The x parameter of GexSi1-x films in different samples ranged from 0.083 to...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2015-03-01
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| Series: | Modern Electronic Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177915000109 |