Controlling the beam angle spread of carbon implantation for improvement of bin map defect in V-NAND flash memory

Controlling the beam angle spread of carbon implantation for improvement of bin map defect in V-NAND flash memory

As the shrinkage of devices accelerates and the vertical layers increase, beam angle spread of carbon ion implantation (C IIP) for the silicon selective epitaxial growth (Si-SEG) areas in V-NAND is one of the most critical parameters related with bin map defects. The roles of C IIP in Si-SEGs are th...

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Bibliographic Details
Main Authors: Gui-Fu Yang, Sung-Hwan Jang, SUNG-UK JANG, Tae-Hyun Lee, Da-Hye Kim, Jung-Ho Huh, Seok-Hyun Yoo
Format: Article
Language:English
Published: Elsevier 2023-07-01
Series:Memories - Materials, Devices, Circuits and Systems
Subjects:
Beam angle spread
Carbon ion implantation
Silicon selective epitaxial growth
V-NAND
Boron ion implantation
Channeling effect
Online Access:http://www.sciencedirect.com/science/article/pii/S277306462300004X

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http://www.sciencedirect.com/science/article/pii/S277306462300004X

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