Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate

Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate

The integration of metal oxides and GaAs semiconductors is quite attractive for its potential applications, but interfacial diffusion and lattice mismatch usually cause huge challenges toward achieving high-performance electronic devices. In this article, we reported a thin layer of epitaxial TiO2 (...

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Bibliographic Details
Main Authors: Yue Li, Yunxia Zhou, Yanrong Deng, Shiwo Ta, Zhao Yang, Haiou Li, Tangyou Sun, Yonghe Chen, Fabi Zhang, Tao Fu, Peihua Wangyang, Jun Zhu, Lizhen Zeng, Xingpeng Liu
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-04-01
Series:Frontiers in Materials
Subjects:
epitaxial
RHEED
TiO2
compressive strain
GaAs
Online Access:https://www.frontiersin.org/articles/10.3389/fmats.2022.846428/full

Internet

https://www.frontiersin.org/articles/10.3389/fmats.2022.846428/full

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