Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension

Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension

Abstract Selective-area p-type doping has been regarded as one of the primary challenges in vertical GaN junction-based power devices. Nickel oxide (NiO), serving as a natural p-type semiconductor without the requirement for sophisticated activation and enabling adjustable charge concentration, is p...

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Bibliographic Details
Main Authors: Shaocheng Li, Shu Yang, Zhao Han, Weibing Hao, Kuang Sheng, Guangwei Xu, Shibing Long
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN
junction termination extension
leakage current
NiO
SBD
Online Access:https://ieeexplore.ieee.org/document/10606442/

Internet

https://ieeexplore.ieee.org/document/10606442/

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