A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes

Conventional deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have extremely low light-emission efficiencies due to the absorption in p-type GaN anode contacts. UV-light-transparent anode structures are considered as one of the solutions to increase a light output power. To...

Full description

Bibliographic Details
Main Authors: Kengo Nagata, Taichi Matsubara, Yoshiki Saito, Keita Kataoka, Tetsuo Narita, Kayo Horibuchi, Maki Kushimoto, Shigekazu Tomai, Satoshi Katsumata, Yoshio Honda, Tetsuya Takeuchi, Hiroshi Amano
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Crystals
Subjects:
AlGaN
tunnel junction
light-emitting diode
deep-ultraviolet
MgZnO
Online Access:https://www.mdpi.com/2073-4352/13/3/524

Internet

https://www.mdpi.com/2073-4352/13/3/524

Similar Items