Curing Process on Passivation Layer for Backside-Illuminated CMOS Image Sensor Application

Curing Process on Passivation Layer for Backside-Illuminated CMOS Image Sensor Application

We fabricated Al/Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/Si and Al/HfO<sub>2</sub>/Si structures to optimize the passivation layer of a backside-illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor (CIS), with the key prope...

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Bibliographic Details
Main Authors: Jongseo Park, Kyeong-Keun Choi, Jehyun An, Bohyeon Kang, Hyeonseo You, Giryun Hong, Sung-Min Ahn, Rock-Hyun Baek
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Plasma-enhanced atomic layer deposition
forming gas annealing
CMOS image sensor
surface passivation
SiO₂
HfO₂
Online Access:https://ieeexplore.ieee.org/document/10154031/

Internet

https://ieeexplore.ieee.org/document/10154031/

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