Sub-THz and THz SiGe HBT Electrical Compact Modeling

Sub-THz and THz SiGe HBT Electrical Compact Modeling

From the perspectives of characterized data, calibrated TCAD simulations and compact modeling, we present a deeper investigation of the very high frequency behavior of state-of-the-art sub-THz silicon germanium heterojunction bipolar transistors (SiGe HBTs) fabricated with 55-nm BiCMOS process techn...

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Bibliographic Details
Main Authors: Bishwadeep Saha, Sebastien Fregonese, Anjan Chakravorty, Soumya Ranjan Panda, Thomas Zimmer
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Electronics
Subjects:
SiGe HBT
NQS effects
transients
compact model
TCAD
HICUM
Online Access:https://www.mdpi.com/2079-9292/10/12/1397

Internet

https://www.mdpi.com/2079-9292/10/12/1397

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