Reliability Express Control of the Gate Dielectric of Semiconductor Devices
The key element determining stability of the semiconductor devices is a gate dielectric. As its thickness reduces in the process of scaling the combined volume of factors determining its electrophysical properties increases. The purpose of this paper is development of the control express method of t...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Belarusian National Technical University
2018-12-01
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| Series: | Pribory i Metody Izmerenij |
| Subjects: | |
| Online Access: | https://pimi.bntu.by/jour/article/view/404 |