Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation
The displacement damage effect of 10 MeV proton radiation on a high-speed InGaAs PIN photodiode has been experimentally investigated to evaluate the stability of the device in a space radiation environment. The results show that the dark current and low-frequency noise of the device increase signifi...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0172476 |