Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation
The displacement damage effect of 10 MeV proton radiation on a high-speed InGaAs PIN photodiode has been experimentally investigated to evaluate the stability of the device in a space radiation environment. The results show that the dark current and low-frequency noise of the device increase signifi...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0172476 |
| _version_ | 1797404812943294464 |
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| author | Rui Li Yudong Li Heini Maliya Ruiqin Zhang Xin Wang Yi Jiang Dong Zhou Qi Guo |
| author_facet | Rui Li Yudong Li Heini Maliya Ruiqin Zhang Xin Wang Yi Jiang Dong Zhou Qi Guo |
| author_sort | Rui Li |
| collection | DOAJ |
| description | The displacement damage effect of 10 MeV proton radiation on a high-speed InGaAs PIN photodiode has been experimentally investigated to evaluate the stability of the device in a space radiation environment. The results show that the dark current and low-frequency noise of the device increase significantly after irradiation, while the capacitance of the device decreases slightly after irradiation, where the spectral response parameters are less affected by irradiation. The increase in dark current is essentially linear with the displacement damage dose. Finally, the effect of proton irradiation on the optical communication system is simulated and the results show that the bit error rate of the system increases with the increase in irradiation fluence, which seriously affects the sensitivity of the optical communication system. |
| first_indexed | 2024-03-09T03:00:28Z |
| format | Article |
| id | doaj.art-e0a4358ba8e44297b33fefb6f4ff8c28 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-03-09T03:00:28Z |
| publishDate | 2023-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-e0a4358ba8e44297b33fefb6f4ff8c282023-12-04T17:18:28ZengAIP Publishing LLCAIP Advances2158-32262023-11-011311115028115028-810.1063/5.0172476Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiationRui Li0Yudong Li1Heini Maliya2Ruiqin Zhang3Xin Wang4Yi Jiang5Dong Zhou6Qi Guo7Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, People’s Republic of ChinaThe displacement damage effect of 10 MeV proton radiation on a high-speed InGaAs PIN photodiode has been experimentally investigated to evaluate the stability of the device in a space radiation environment. The results show that the dark current and low-frequency noise of the device increase significantly after irradiation, while the capacitance of the device decreases slightly after irradiation, where the spectral response parameters are less affected by irradiation. The increase in dark current is essentially linear with the displacement damage dose. Finally, the effect of proton irradiation on the optical communication system is simulated and the results show that the bit error rate of the system increases with the increase in irradiation fluence, which seriously affects the sensitivity of the optical communication system.http://dx.doi.org/10.1063/5.0172476 |
| spellingShingle | Rui Li Yudong Li Heini Maliya Ruiqin Zhang Xin Wang Yi Jiang Dong Zhou Qi Guo Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation AIP Advances |
| title | Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation |
| title_full | Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation |
| title_fullStr | Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation |
| title_full_unstemmed | Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation |
| title_short | Study of displacement damage effects in InGaAs PIN photodiode under 10 MeV proton irradiation |
| title_sort | study of displacement damage effects in ingaas pin photodiode under 10 mev proton irradiation |
| url | http://dx.doi.org/10.1063/5.0172476 |
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