A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor
This paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-04-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/5/981 |
| _version_ | 1797599087503081472 |
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| author | Peng Li Wei Li Changnan Chen Sheng Wu Pichao Pan Ke Sun Min Liu Jiachou Wang Xinxin Li |
| author_facet | Peng Li Wei Li Changnan Chen Sheng Wu Pichao Pan Ke Sun Min Liu Jiachou Wang Xinxin Li |
| author_sort | Peng Li |
| collection | DOAJ |
| description | This paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0.5 × 0.5 mm, and the chips are fabricated only from the front side of the wafer for simple, high-yield and low-cost batch production. Herein, the (100) active layer is specifically used to form high-performance piezoresistors for high-temperature pressure sensing, while the (111) handle layer is used to single-side construct the pressure-sensing diaphragm and the pressure-reference cavity beneath the diaphragm. Benefitting from front-sided shallow dry etching and self-stop lateral wet etching inside the (111)-silicon substrate, the thickness of the pressure-sensing diaphragm is uniform and controllable, and the pressure-reference cavity is embedded into the handle layer of (111) silicon. Without the conventionally used double-sided etching, wafer bonding and cavity-SOI manufacturing, a very small sensor chip size of 0.5 × 0.5 mm is achieved. The measured performance of the 1.5 MPa ranged pressure sensor exhibits a full-scale output of approximately 59.55 mV/1500 kPa/3.3 VDC in room temperature and a high overall accuracy (combined with hysteresis, non-linearity and repeatability) of 0.17%FS within the temperature range of −55 °C to 350 °C. In addition, the thermal hysteresis is also evaluated as approximately 0.15%FS at 350 °C. The tiny-sized high temperature pressure sensors are promising in various industrial automatic control applications and wind tunnel testing systems. |
| first_indexed | 2024-03-11T03:29:30Z |
| format | Article |
| id | doaj.art-e0a6bc98142f4010a036aa0d478d6517 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T03:29:30Z |
| publishDate | 2023-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-e0a6bc98142f4010a036aa0d478d65172023-11-18T02:30:02ZengMDPI AGMicromachines2072-666X2023-04-0114598110.3390/mi14050981A Single-Side Micromachined MPa-Scale High-Temperature Pressure SensorPeng Li0Wei Li1Changnan Chen2Sheng Wu3Pichao Pan4Ke Sun5Min Liu6Jiachou Wang7Xinxin Li8State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaThis paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0.5 × 0.5 mm, and the chips are fabricated only from the front side of the wafer for simple, high-yield and low-cost batch production. Herein, the (100) active layer is specifically used to form high-performance piezoresistors for high-temperature pressure sensing, while the (111) handle layer is used to single-side construct the pressure-sensing diaphragm and the pressure-reference cavity beneath the diaphragm. Benefitting from front-sided shallow dry etching and self-stop lateral wet etching inside the (111)-silicon substrate, the thickness of the pressure-sensing diaphragm is uniform and controllable, and the pressure-reference cavity is embedded into the handle layer of (111) silicon. Without the conventionally used double-sided etching, wafer bonding and cavity-SOI manufacturing, a very small sensor chip size of 0.5 × 0.5 mm is achieved. The measured performance of the 1.5 MPa ranged pressure sensor exhibits a full-scale output of approximately 59.55 mV/1500 kPa/3.3 VDC in room temperature and a high overall accuracy (combined with hysteresis, non-linearity and repeatability) of 0.17%FS within the temperature range of −55 °C to 350 °C. In addition, the thermal hysteresis is also evaluated as approximately 0.15%FS at 350 °C. The tiny-sized high temperature pressure sensors are promising in various industrial automatic control applications and wind tunnel testing systems.https://www.mdpi.com/2072-666X/14/5/981piezoresistive pressure sensorhigh temperatureultra-small size(100)/(111) hybrid SOI waferfront-side bulk-micromachining process |
| spellingShingle | Peng Li Wei Li Changnan Chen Sheng Wu Pichao Pan Ke Sun Min Liu Jiachou Wang Xinxin Li A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor Micromachines piezoresistive pressure sensor high temperature ultra-small size (100)/(111) hybrid SOI wafer front-side bulk-micromachining process |
| title | A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor |
| title_full | A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor |
| title_fullStr | A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor |
| title_full_unstemmed | A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor |
| title_short | A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor |
| title_sort | single side micromachined mpa scale high temperature pressure sensor |
| topic | piezoresistive pressure sensor high temperature ultra-small size (100)/(111) hybrid SOI wafer front-side bulk-micromachining process |
| url | https://www.mdpi.com/2072-666X/14/5/981 |
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