Formation of electron traps in semiconducting polymers via a slow triple-encounter between trap precursor particles

ABSTRACTAlready in 2012, Blom et al. reported (Nature Materials 2012, 11, 882) in semiconducting polymers on a general electron-trap density of ≈3 × 1017 cm−3, centered at an energy of ≈3.6 eV below vacuum. It was suggested that traps have an extrinsic origin, with the water-oxygen complex [2(H2O)-O...

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Bibliographic Details
Main Authors: Mohammad Sedghi, Camilla Vael, Wei-Hsu Hu, Michael Bauer, Daniele Padula, Alessandro Landi, Mirko Lukovic, Matthias Diethelm, Gert-Jan Wetzelaer, Paul W. M. Blom, Frank Nüesch, Roland Hany
Format: Article
Language:English
Published: Taylor & Francis Group 2024-12-01
Series:Science and Technology of Advanced Materials
Subjects:
Online Access:https://www.tandfonline.com/doi/10.1080/14686996.2024.2312148