Pairing mechanism of heavily electron doped FeSe systems: dynamical tuning of the pairing cutoff energy
We studied the pairing mechanism of the heavily electron doped FeSe (HEDIS) systems, which commonly have one incipient hole band—a band top below the Fermi level by a finite energy distance ε _b —at Γ point and ordinary electron bands at M points in Brillouin zone (BZ). We found that the system allo...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2016-01-01
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| Series: | New Journal of Physics |
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| Online Access: | https://doi.org/10.1088/1367-2630/18/11/113054 |