Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering
We have grown structurally high-quality GaN with a low residual shallow donor concentration (<5 × 1015 cm−3) through pulsed sputtering. Light Si doping to this film with a Si concentration of 2 × 1016 cm−3 leads to the formation of an n-type film with room temperature electron mobility of 1240 cm...
| প্রধান লেখক: | , , |
|---|---|
| বিন্যাস: | প্রবন্ধ |
| ভাষা: | English |
| প্রকাশিত: |
AIP Publishing LLC
2019-07-01
|
| মালা: | AIP Advances |
| অনলাইন ব্যবহার করুন: | http://dx.doi.org/10.1063/1.5103185 |